production specification npn silicon epitaxial transistor 2SD1005 e056 www.gmicroelec.com rev.a 1 features z high collector to base voltage. z excellent dc current gain linearity. z complements to pnp type 2sb804. sot-89 ordering information type no. marking package code 2SD1005 bw/bv/bu sot-89 maximum rating @ ta=25 unless otherwise specified symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current 1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55 to +150 pb lead-free
production specification npn silicon epitaxial transistor 2SD1005 e056 www.gmicroelec.com rev.a 2 electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =100v, i e =0 0.1 ua emitter cut-off current i ebo v eb =5v,i c =0 0.1 ua collector-emitter saturation voltage v ce(sat) i c/ i b =500ma/50ma 0.15 0.5 v base-emitter saturation voltage v be(sat) i c/ i b =500ma/50ma 0.9 1.5 v base-emitter voltage v be v ce =10v,i c =10ma 0.6 0.63 0.7 v v ce =2v, i c =100ma 90 200 400 dc current gain(note) h fe v ce =2v, i c =500ma 25 80 current gain bandwidth product f t v ce =5v,i e =10ma 160 mhz output capacitance c ob v cb =10v, f=1mhz ,i e =0a 12 pf classification of h fe2 range 90-180 135-270 200-400 marking bw bv bu typical characteristics @ ta=25 unless otherwise specified
production specification npn silicon epitaxial transistor 2SD1005 e056 www.gmicroelec.com rev.a 3 package outline plastic surface mounted package sot-89 soldering footprint unit:mm package information sot-89 dim min max a 4.30 4.70 b 2.25 2.65 c 1.50 typical d 0.40 typical e 1.40 1.60 f 0.48 typical h 1.60 1.80 j 0.40 typical l 0.90 1.10 k 3.95 4.35 all dimensions in mm device package shipping 2SD1005 sot-89 1000/tape&reel b k c d e j f a h l 4 5 4 5 1.00 1.50 1.50 0.90 2.20 0.90 1.00 1.50
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